A Gate Drain and Source (GDS) in Graphene Hall Effect is a fundamental concept in the field of spintronics, which refers to the manipulation of spins using electric fields. Spintronics is an emerging technology that aims to utilize the unique properties of graphene, such as its high magnetic moment and conductivity, to create novel electronic devices.
(what is gate drain and source in graphene hall effect)
In graphene Hall Effect, a gate voltage is applied between two graphene layers. This gate voltage creates an electrical field that causes electrons to move from one layer to another across the boundary between the layers. The movement of electrons generates a spin current in the device, which can be harnessed for various applications, such as energy storage and quantum computing.
The flow of spin current through the GDS is known as the gate-induced spinCurrent. This spinCurrent is induced by the applied gate voltage and flows perpendicular to the direction of the applied voltage. The spinCurrent can be controlled by changing the gate voltage, which allows for precise control of the device’s operation.
There are several types of gates used in graphene Hall Effect devices. One common type is the Rashba gate, which creates a spin-polarized electric field along the surface of the graphene layer. Another type of gate is the Josephson gate, which creates a spin-polarized electric field in a channel between the graphene layers. These gates allow for precise control of the flow of spin current through the device.
The sources of the spin currents in the GDS also play a critical role in the performance of the device. A good source should provide a steady, consistent flow of spin current over a long period of time without flickering or loss. In addition, the source should have low noise and low power consumption, which are important considerations for large-scale semiconductor devices.
(what is gate drain and source in graphene hall effect)
Overall, the GDS in graphene Hall Effect is a powerful tool for controlling the flow of spin current in devices that use this property. By understanding how the gate voltage affects the spin currents, researchers can design and build more efficient and effective spintronic devices for various applications.
Inquiry us
