can effectively separate collect photogenerated carriers by forming asymmetric electron hole transport channels which is one of the core problems of crystalline silicon other types of photovoltaic devices. At present the mainstream industry of Al BSF perc (passive emitter real cell) batteries use high-temperature diffusion doping to form p-n homojunction realize the selective transmission of electrons holes through the direct contact of electrode / c-Si. High temperature doping will bring serious free carrier infrared absorption Auger recombination the carrier recombination coefficient at the contact is large which restricts the improvement of photoelectric conversion efficiency of Al BSF perc cells. Compared with homojunction cells passive contact heterojunction cells have significant advantages in improving conversion efficiency simplifying preparation process which will become the main development direction of ultra-high efficiency crystalline silicon cells in the future. Heterojunction solar cells with amorphous silicon film as passive contact material have achieved more than 25% efficiency but there are still some problems such as high parasitic optical absorption high cost. Silicon heterojunction solar cells based on MoOx (x < 3) hole selective contact have obvious advantages in carrier selective transport but the long-term stability of the devices is facing challenges due to their poor thermodynamic stability.
to solve the above problems the team of Li Dongdong Lu Linfeng associate researchers of Shanghai Academy of higher studies of Chinese Academy of Sciences together with Jinneng Clean Energy Technology Co. Ltd. took MoOx / c-Si heterojunction battery as the research object proposed strategies to improve efficiency stability. Based on the interface evolution characteristics of MoOx / c-Si MoOx / metal electrode the c-Si / SiOx / MoOx / v2ox / ITO / Ag laminated structure was constructed. The photoelectric conversion efficiency of the cell reached 20.0% the stability was significantly improved. The SiO2 tunneling passivation layer at the MoOx / c-Si interface inhibits the redox reaction caused by the direct contact between MoOx c-Si reduces the oxygen vacancy concentration in MoOx. Ultra thin v2ox layer was introduced on the surface of MoOx film to improve its stability in air the ability of anti sputtering plasma damage. ITO layer effectively inhibited the metal migration plasma parasitic absorption of metal electrode.
the stack structure constructed in this work provides a new idea for the research of compound / c-Si passivated contact heterojunction solar cells. It can be used as a universal method to improve the efficiency stability of heterojunction solar cells provides a new idea for the research of other types of thin film solar cells. Relevant research results of
were published in the Journal of advanced functional materials（ DOI:10.1002/adfm.202004367 )。 The work was supported by the National Natural Science Foundation of China Shanghai Natural Science Foundation Shanxi Provincial Department of science technology the youth innovation promotion association of Chinese Academy of Sciences. Cao Lu Dong Li Shuangfeng are the co authors of the thesis.
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