Aluminum Nitride AlN is an atomic crystal, a diamond-like nitride, which can be stabilized up to 2200°C. The room temperature strength is high, and the strength decreases slowly with the increase of temperature. It has good thermal conductivity and a small thermal expansion coefficient, making it a good thermal shock material. It has strong resistance to corrosion by molten metal and is an ideal crucible material for melting and casting pure iron, aluminum or aluminum alloy. Aluminum nitride is also an electrical insulator with good dielectric properties, and it is also promising as an electrical component. The aluminum nitride coating on the surface of gallium arsenide can protect it from ion implantation during annealing. Aluminum nitride is also a catalyst for the transformation from hexagonal boron nitride to cubic boron nitride. It reacts slowly with water at room temperature. It can be synthesized from aluminum powder at 800~1000℃ in ammonia or nitrogen atmosphere. The product is white to grayish-blue powder. Or synthesized by Al O -C-N system at 1600~1750℃, the product is an off-white powder. Or aluminum chloride and ammonia are made by gas-phase reaction. The coating can be synthesized by the vapor deposition method in the AlCl-NH system.
The reaction of Aluminum Nitride AlN
AlN+3H O==catalyst===Al(OH) ↓+NH ↑
Applications of Aluminum Nitride AlN
Due to the piezoelectric properties of Aluminum Nitride AlN, epitaxially grown thin-film crystalline aluminum nitride is used for surface acoustic wave sensors (SAW) deposited on silicon wafers. One application is radio frequency filters, which are widely used in mobile phones and are called film bulk acoustic resonators (FBAR). This is a MEMS device that uses aluminum nitride sandwiched between two metal layers.
Aluminum Nitride AlN is also used to construct piezoelectric micromachined ultrasonic transducers, which emit and receive ultrasonic waves and can be used for aerial distance measurement up to one meter.
The metallization method allows Aluminum Nitride AlN to be used in electronic applications similar to aluminum oxide and beryllium oxide. Aluminum Nitride AlN nanotubes are inorganic quasi-one-dimensional nanotubes, and electrons such as carbon nanotubes have been suggested as chemical sensors for toxic gases.
At present, there are many studies using gallium nitride-based semiconductors to develop light-emitting diodes that work under ultraviolet light, and the use of alloy aluminum gallium nitride, which has achieved wavelengths as short as 250 nm. In 2006, low-efficiency Aluminum Nitride AlN LED emission at 210 nm was reported.
The characteristic of Aluminum Nitride AlN
(1) High thermal conductivity (about 320W/m·K), close to BeO and SiC, and more than 5 times that of Al2O3;
(2) The thermal expansion coefficient (4.5×10-6℃) matches with Si (3.5~4×10-6℃) and GaAs (6×10-6℃);
(3) Various electrical properties (dielectric constant, dielectric loss, volume resistivity, dielectric strength) are excellent;
(4) Good mechanical properties, higher flexural strength than Al2O3 and BeO ceramics, and can be sintered under normal pressure;
(5) High purity;
(6) Good optical transmission characteristics;
(7) Non-toxic;
(8) It can be made by casting process. It is a promising high-power integrated circuit substrate and packaging material.
The supplier of Aluminum Nitride AlN
As a global supplier of Aluminum Nitride, Tanki, New Materials Co., Ltd has extensive experience in the performance, application, and cost-effective manufacturing of advanced and engineering materials. The company has successfully developed a series of powder materials (molybdenum disilicide, Lanthanum nitride (LAN powder, calcium silicide, iron boride), high-purity targets, functional ceramics, and structural devices, and provide OEM services. For the latest price of Aluminum Nitride AlN, send us an email or click on the needed products to send an inquiry.
