Preparation and properties of bismuth telluride composite thermoelectric thin films and devices

Based on the three ω transient heat flow method and the steady-state silicon nitride cantilever method to measure the thermal conductivity of thin film materials, two sets of complete thermal conductivity characterization platforms for carbon nanotube-bismuth telluride hybrid delicate film material system were developed. High-precision silicon nitride physical mask plate and self-supporting lean film sample transfer methods were developed. Related work has obtained one authorized invention patent and four utility model patents. Design and construct a femtosecond laser micro-nano processing system. This work independently built a femtosecond laser processing and transfer system to realize the three-dimensional processing and transfer of thermoelectric thin film materials, laying a solid foundation for the subsequent research on material properties and microdevices. Related work obtained one authorized invention patent and two utility model patents and published four SCI papers. The thermoelectric properties of carbon nanotube-bismuth telluride composite films with different two-phase volume ratios were prepared by magnetron sputtering. It was found that both bismuth telluride and carbon nanotubes contributed to the thermoelectric properties of the composite films at the initial stage of deposition. The carbon nanotube (CNTS) is the main transmission body, and the carbon nanotube-bismuth telluride interface significantly affects the performance. With the increase of deposit, the contribution of bismuth telluride to the total thermoelectric properties gradually becomes dominant. At this point, the gift of the two films to the properties of the composite film is closer to the "parallel" relationship. If you are looking for high quality, high purity and cost-effective bismuth telluride, or if you require the latest price of bismuth telluride, please feel free to email contact mis-asia.