What’s Nano silicon?
Nano silicon
The smallest diameter crystal silicon particles is 5 nanometers. This powder is high in purity and has a small particle size. It also exhibits uniform distribution. This product is tasteless and non-toxic due to its high surface area, low bulk density and high surface activity. This new type of optoelectronic materials, nanosilicon powder, is made with high-power light sources and has a large gap energy.
Nano silicon: Recent Research
(1) You can alter the silicon-rich and annealing conditions to control the size or density of silicon dioxide nanocrystals. The critical temperature required for formation of silicon nanocrystals in silicon oxide is 1000oC. We have proved through experimentation that this temperature is 900oC. After annealing to 900oC, the high-resolution electron photo of silicon-rich silicone oxide has a silicon rich content of around 30%. The presence of silicon nanocrystals is evident.
(2) First time observation of the electroluminescence from Au/(Ge/SiO2) superlattice/p -Si was made. High resolution electron micrograph of four-period Ge/SiO2 supra lattice. SiO2 is the bright-line with a thickness 2.0 nm. The Ge layer has a thickness 2.4 nm.
(3) By magnetron sputtering, the nano-SiO2/Si/SiO2 single-potential high-potential sandwich structure (NDB), was created on silicon substrate. It was the first time that visible electroluminescence was achieved in the Au/NDB/pSi structure. We find that electroluminescence’s peak position and intensity oscillate synchronously with changes in the Nanosilicon layer thickness (W). Analyses and further experiments have confirmed that the oscillation time is 1/2 of de Broglie wavelength. This is explained by an electroluminescence theory that our group has proposed.
(4) Er electroluminescence (with a wavelength 1.54mm) was first realized using the SiO2;Si Er film, which was grown through magnetron spraying.
(5) The first report on ultraviolet-based, silicon-based ultraviolet luminescence using heat-treated ITO/natural silicone oxide/pSi showed that it had a low threshold of 360nm.
Applications of Nano silicon
The photoluminescence of the main wavelengths (including 1.54mm and 1.62mm in the near-ultraviolet) and photoluminescence under low threshold voltage electroluminescence were realized. There are also widely supported models for photoluminescence. This is a foundation to enable the realization of the first silicon-based optoelectronicintegration. This technology has great scientific and application potential.
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