The absorption edge of 0.5% ATO film

X-ray powder diffraction (XRD) measurements were performed to characterize and compare the formation of pristine SnO2 and 0.5% ATO NPs. The main diffraction peaks of 0.5% ATO NPs, oriented along the (110), (101), (200), and (211), are all well assigned to tetragonal rutile SnO2 (ICSD card: 154960), indicating the same rutile lattice structure. No additional peaks were detected, suggesting the absence of other crystalline phases, such as tin (II) oxide or antimony oxides. Nevertheless, upon the addition of the Sb dopant, a prominent broadening of the XRD peaks could be detected, as shown in Fig. S10, suggesting a smaller crystalline domain size and the distortion of the local lattice matrices due to the successful incorporation of Sb atoms into the SnO2 lattices. By loading 0.5% Sb content, the WF of doped SnO2 NPs is significantly increased from 4.01±0.02 eV for pristine SnO2 to 5.13±0.02 eV, which reflects a remarkable change in charge carrier type in 0.5% ATO compared to the host SnO2 material. Electrical properties that the pristine SnO2 film exhibits a relatively low conductivity of 3.27×108 S cm1 and an electron concentration of 1.76×109 cm3, indicating its intrinsic n-type char-acter due to oxygen vacancies and tin interstitials vacancies. Hall effect measurements were conducted to study charge carrier concentrations of pristine SnO2 and 0.5% ATO NPs notably, by adding 0.5% Sb dopant, Hall effect measurements evidence that the dominant charge carriers in doped SnO2 film are holes with a concentration of 1.83×1013 cm3, demonstrating a solid p-type character. If you are looking for high quality, high purity, and cost-effective ATO, or if you require the latest price of ATO, please feel free to email contact mis-asia.