The Molybdenum Disulfide based vdWHs are also interesting for developing highly sensitive photodetectors

The Molybdenum Disulfide-based vdWHs are also interesting for developing highly sensitive photodetectors. Liu et al. developed photodetectors using vertically stacked p-Sb2Te3/n-Molybdenum Disulfide vdWHs, which showed a photoresponsivity of 330 A W−1, a fast response time of <500 μs, and a power conversion efficiency of 4.5%. Yang et al. fabricated a few-layer SnSe/Molybdenum Disulfide vdWHs with a current Ion/Ioff ratio of 1 × 105. The type-II SnSe/Molybdenum Disulfide heterostructure FET showed a fast response time of <10 ms, a photoresponsivity (Rλ) of 100 A W−1, and an EQE of 23.3 × 103% under 532 nm light illumination. The gallium telluride (GaTe)–Molybdenum Disulfide p–n vdW heterojunction FET showed a fast response time of <10 ms, a photoresponsivity of 1.365 A W−1, and an EQE of 266% under 633 nm light illumination, much higher compared with the photoresponsivity of 0.03 A W−1 for a flexible GaTe photodetector measured at a wavelength of 473 nm under an incident laser power of 80.5 mW cm−2. The electronic and optoelectronic properties of Molybdenum Disulfide have been improved by fabricating vdWH-based FETs with other 2D materials. The vertically stacked vdWHs of SnS2/Molybdenum Disulfide monolayers showed improved mobility of 27.6 cm2 V−1 s−1, Ion/Ioff ratio of 106, and photoresponsivity of 1.36 A W−1. 2D layered vdW semiconductor MoTe2 has been used with Molybdenum Disulfide to develop vdW heterojunction p–n diodes for extending the range of photodetection in the NIR region. Ding et al. fabricated vertically stacked 2H-MoTe2/Molybdenum Disulfide bilayer heterostructures using the CVD technique for broadband photodetectors ranging from 200 nm (UV) to 1100 nm (NIR) regions. If you are looking for high quality, high purity and cost-effective Molybdenum Disulfide, or if you require the latest price of Molybdenum Disulfide, please feel free to email contact mis-asia.