Hysteresis is an important phenomenon that can affect the performance and reliability of devices made fromGrapheneFETs. The effects of hysteresis on the electrical performance of a device can vary depending on the specific characteristics of the material, the geometry of the device, and the operating conditions.
(is hysteresis in i-v curves for graphene fet good or bad?)
In general, hysteresis can lead to voltage and current imbalances between the two channels of a graphene FET, which can cause the device to behave unpredictably. This can result in reduced device efficiency and increased risk of errors.
However, hysteresis can also have beneficial effects on graphene FETs. For example, some studies have shown that hysteresis can improve the stability of graphene FETs by reducing the sensitivity to temperature fluctuations. Hysteresis can also help to increase the resistance of graphene FETs under certain operating conditions, such as when they are subjected to high levels of current or stress.
(is hysteresis in i-v curves for graphene fet good or bad?)
Overall, while hysteresis can be detrimental to the performance and reliability of graphene FETs, it can also have positive effects on their behavior and functionality. Therefore, it is important to carefully control hysteresis in order to optimize the performance of graphene FETs.
Inquiry us
