Gallium Nitride, or GaN, is a mechanically and heat-resistant semiconductor compound. In its pure form, it has a band-gap of 3.4 eV. Purity: 99.99%
Gallium Nitride GaN:
Gan Gallium Nitride
This is a semiconductor compound that is mechanically hard and has high thermal conductivity. In its pure form, it has a band-gap of 3.4eV.
Gallium Nitride has the following properties:
CAS Number |
CAS 2561797-4 |
Purity |
>=99.99% |
CAS number |
25617-97-4 |
Appearance |
Yellow Powder |
X ray Diffraction |
Conforms to Structure |
Trance Metal Analysis |
200 ppm |
This material is suitable for satellite solar cells arrays due to its low sensitivity (with another III-nitride group). This equipment can also be used for military or space applications because it is resistant to radiation.
Since the
Gallium nitride transistor
As they are able to operate at higher temperatures, and with a higher voltage than the Arsenide (GaAs), they make an ideal power amplifier at microwave frequencies. GAN can also be used to provide a feature that is hoped for in THz devices. GaN has been revealed to be a candidate for 5G cell base stations due to its high voltage breakdown and power density.
GaN materials research and applications are at the forefront of global semiconductor research. It is a new material for developing semiconductor devices, optical electronics and other semiconductor materials, such as SiC or diamonds. These are also known as first-generation GE, Si-A third-generation semiconductor after semiconductor material, GaAs second-generation, InP composite semiconductor material. It has a large direct bandgap and a strong atomic connection, as well as high thermal conductivity (almost no sour corrosive corrosion), high chemical stability, etc. Applications in high-temperature, high-power devices, microwaves with high frequency, have broad prospects.
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Gallium Nitride powder
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Gallium Nitride Product Performance
GaN powder is a versatile material with a large direct bandgap. It also has strong atomic bonds and high thermal conductivity.
Technical Parameters of Gallium Nitride GaN:
Product Name | MF | Purity | Particle Size | Melting Point | Density | Color |
gallium nitride | GaN | 99.99% | -60 Mesh | 1700 | 6.1g/mL,25/4 | light yellow |
Chemical Composition and Properties of Gallium Nitride GaN:
GaN | Curiosity | You can also find us on Twitter @Ni | Zn | Al | Na | The following are some of the ways to get in touch with us | Ca | |
99.99% | 0.0005% | 0.0003% | 0.0005% | 0.001% | 0.0005% | 0.0003% | 0.0005% | 0.005% |
What is
Gallium Nitride GaN Powder
produced?
Group III-V gallium nitride
Gan semiconductor
The compound has a high resistance to corrosion. It is because of a strong bond that exists between Ga and Nitrogen, the compound is corrosion resistant. Ballium Nitride is a direct bandgap (bandgap=3.4 with fibrous mineral structure) semiconductor and is a suitable material to make corrosive ambient-light emitting devices. Gallium Nitride is made by reacting Ga2O3 and NH3 together at high temperatures of around 1000 deg C.
Ga 2 O 3 + 2 NH 3 – 2 GaN + 3H 2 O
A compound organometallic containing Ga with a nitrogen atom may also be formed by the chemical phase. GaN is unaffected by acidic and alkaline environments.
Applications
Gallium Nitride GaN Powder
:
Since 1990 GaN has become a common light-emitting device (LED). Gallium nitride emits blue light which indicates it is a semiconductor with a direct III/V band gap.
Gallium Nitride Semiconductor
This is a great choice for high-power transistors, which can operate at high temperatures. Blu-ray disk reading. It is also used for lasers and photonics. In the near future, sensor technology will use gallium nitride.
1. GaN is also used in smaller, full-color panels for trains and buses. GaN-based leds are more efficient, and offer another option for blue and Green LEDs.
2. The use of gallium nitride in semiconductors is widespread, including electric vehicles and photovoltaics.
3. The 5G radiofrequency uses gallium nitride. Gallium nitride will gradually replace the silicon-based materials in the 5G field due to the increased demands for radio frequency energy and power consumption.
4. GaN can be used for fast charging mobile phones.
Gallium nitride charger
The use of
Gan technology
Its high-efficiency, compact size, and large power are key characteristics to the development of super-fast charger technology.
Gallium Nitride GaN powder – Packing & Shipping
The packaging we use depends on the amount of gadolinium nitride (GaN) powder.
Powder packaging of gallium nitride, GaN:
Vacuum packaging 100g,500g or 1kg/bag. 25kg/barrel.
Shipment of GaN powder, also known as gallium nitride:
As soon as payment is received, you can ship your order by sea, air or express.
Technology Co. Ltd., () is an established global chemical material manufacturer and supplier with more than 12 year’s experience in the production of high-quality nanomaterials. These include boride powders, nitride particles, graphite particles, sulfide particles, 3D printing materials, etc.
Contact us to send an inquiry if you’re looking for high quality gallium nitride. (
brad@ihpa.net
)
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Alternative Names |
gallium nitride powder, GaN, GaN powder, gallium mononitride |
CAS Number |
25617-97-4 |
Compound Formula |
GaN |
Molecular Mass |
83.73 |
Appearance |
Light Yellow Powder |
Melting Point |
1700 degC |
Boiling Point |
N/A |
Density |
6.1 g/cm3 |
Solubility In H2O |
N/A |
Exact-Mass |
82.9287 |
Monoisotopic Mash |
82.9287 |
|
|
Sign Word |
Warning |
Hazard Statements |
H317 |
Hazard Codes |
N/A |
Risk Codes |
N/A |
Safety Declarations |
22-24/25 |
RTECS Number |
LW9640000 |
Transport Information |
N/A |
WGK Germany |
3 |