What is Bi2S3?
Bismuth(III) sulfide (Bi 2S 3) is a bismuth and sulfur chemical compound. It occurs in nature as the mineral bismuthinite. Bismuth sulfide belongs to group 15 post-transition metal tri chalcogenides. Two irreversible and exothermic transitions are observed at around 210 and 253°C in the DSC thermograms of bismuth sulfide powder. They correspond to the crystallization of Bi2S3, followed by the decomposition of bismuth- and sulfur-rich sulfides and the subsequent formation of Bi2S3. The endotherm observed at 255°C has been identified with the growth of a bismuth-rich eutectic phase. Its dependence on high temperatures is due to the need for sulfur loss. Ultralong nanoribbons with lengths of up to millimeters can be obtained on a large scale via a solvothermal process using a mixture of aqueous NaOH solution in glycerol. Ultrathin corrugated nanosheets can also be achieved using a hydrazine salt-based liquid phase exfoliation process. Bi2S3 is a direct bandgap semiconducting with a bandgap of 1.3 eV and a large absorption coefficient 105 cm-1.
Bi2S3 systems
To investigate the effect of annealing temperature and pressure on the properties of bismuth sulfide films deposited from a chemical bath, in this article, we report the results of dynamic and isothermal treatments studied under different pressures. The isotherms were chosen in a temperature range close to the amorphous–crystalline transition temperature. The structural characterization of these films is reported, along with the electrical characterization. We also report the reactions on the abundant powder (chemical bath precipitate) in inert environments and studied by differential scanning calorimetry (DSC). The correlation between the structural and thermal characterization of the powder with the structure and electrical properties of annealed thin films will help determine the reactions taking place and the annealing parameters rendering highly conductive single-phase, Bi2S3 systems.
Films of Bi2S3
Semiconducting bismuth sulfide thin films have received considerable attention in recent years because of their applications in various areas of science and technology. Among the different deposition techniques for thin films of Bi2S3, chemical bath deposition has been singled out as an inexpensive, simple, and convenient technique for large-area applications. We have reported that in the temperature range of 170–400°C, annealing in vacuum, argon, or hydrogen renders a highly conductive (∼102–103 Ω−1 cm−1) n-type material, while in air, the conductivity goes through a maximum of 0.54 Ω−1 cm−1. X-ray studies of the annealed samples have shown that an amorphous to crystalline transition takes place around 170–200°C in all the environments studied and that the details of the conductivity enhancement mechanisms at higher temperatures are gas dependent. At high temperatures and under inert environments, the films are rich in bismuth and with a complex morphology. This complex or segregated morphology is not desired in many applications. Therefore, it is useful to establish thermal treatments' pressure or temperature regime in which crystalline and conductive one-phase systems are still obtained.
Price of Bi2S3
Bi2S3 particle size and purity will affect the product's Price, and the purchase volume can also affect the cost of Bi2S3. A large amount of large amount will be lower. The Price of Bi2S3 is on our company's official website.
Bi2S3 supplier
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