Inorganic gallium nitride has the chemical formula GaN. It is made up of gallium, nitrogen and nitride. It is a direct-bandgap semiconductor that has been widely used in light emitting diodes (LEDs) since 1990. This compound has high hardness and a similar structure to wurtzite. Gallium Nitride has an energy gap of about 3.4 electronvolts. This can be applied to high-speed, high-power optoelectronic parts. Gallium nitride is used, for instance, in violet lasers. You can use it without nonlinear semi-conductor pumped solid state lasers.
In 2014, Yuki Akasaki, Professor of Nagoya University in Japan as well as Hiroshi Amao, Professor of Nagoya University in Japan won the Nobel Prize in Physics. Shuji Nakamura, Professor of University of California Santa Barbara also received the prize.
Applications of GaN
GaN series has low heat production rate and high electric breakdown field. These materials are crucial for developing high-temperature and high power electronic devices, as well high-frequency microwave devices.
GaN materials are ideal for light-emitting devices with short wavelengths. GaN, and its alloys, cover the spectrum from red through to ultraviolet.
GaN is the frontier of global semiconductor technology. This is a new semiconductor material used for microelectronics and optoelectronics. Along with semiconductor materials, such as SIC or diamond, it’s known as the next generation of Ge and Si.
Semiconductor material, second-generation GaAs materials, InP compounds semiconductor materials and third generation semiconductor materials. It has a wide bandgap and strong atomic bonds. It also has high thermal conductivity (nearly uncorroded by acid) as well as strong radiation resistance. It’s used in photoelectronics and devices that require high temperatures and power.
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