Aluminum nitride (AIN) is a covalent-bond compound. It is an atomic-crystal, and it belongs to the diamond nitride group. AlN can stabilized to 2200. The strength of AlN at room temperature can be high. It decreases gradually with increasing temperature. It is good for thermal shocks due to its good thermal conductivity. It has a high resistance to molten-metal corrosion, making it an ideal material for melting pure iron, aluminum and aluminum alloys. Aluminum nitride also has excellent dielectric properties. It is also promising for use as an electrical component. The aluminum nitride layer on the gallium arsenide surface protects it from ion implantation during annealing. Aluminum nitride also acts as a catalyst for the transformation of hexagonal to cubic boron. It is a slow reactant with water. The product can be synthesized by combining aluminum powder with ammonia and nitrogen at 8001000. The powder can range from white to grayish-blue. If the Al2O3 system is used at 16001750 and the product is white powder, then this method will work.
A surface acoustic-wave detector also uses epitaxial stretching due to the piezoelectric effects of aluminum Nitride. The detector will then be mounted on the silicon wafer. The thin film can only be manufactured reliably in very few places.
Aluminium nitride is a ceramic material with a low expansion coefficient and good thermal conductivity. It can be used as a heat exchanger for high-temperature structural parts. It can also be used to make heat exchangers for high-temperature structural components.
It can be used to melt metals, such as Al and Cu.
Aluminum Nitride is widely used as a semiconductor electronic package due to its excellent properties in terms of electrical, mechanical and thermal properties.
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