Zirconium diboride is a chemical substance and its molecular formula is ZrB2. Nature gray hard crystals. zirconium diboride has three components: zirconium monoboride, zirconium diboride, and zirconium tribromide. Only zirconium diboride is stable in a wide temperature range. Industrial production is mainly based on zirconium diboride. Zirconium diboride is a hexagonal crystal, gray crystal or powder, with a relative density of 5.8 and a melting point of 3040°C. High-temperature resistance, high strength at room temperature and high temperature. Good thermal shock resistance, low resistance, anti-oxidation at high temperature. The melting point is about 3000°C. With metallic luster.
Zirconium diboride powder features
TiB2, ZrB2, HfB2, VB2, NbB, NbB2, TaB, TaB2, CrB2, Mo2B5, W2B5, Fe2B, FeB, CoB, Co2B, NiB, Ni2B, Ni2B, LaB6, UB4, UB2.
Zirconium diboride (ZrB2) is a highly covalent refractory ceramic material with a hexagonal crystal structure. ZrB2 is an ultra high temperature ceramic (UHTC) with a melting point of 3246 °C. This along with its relatively low density of ~6.09 g/cm3 (measured density may be higher due to hafnium impurities) and good high temperature strength makes it a candidate for high temperature aerospace applications such as hypersonic flight or rocket propulsion systems. It is an unusual ceramic, having relatively high thermal and electrical conductivities, properties it shares with isostructural titanium diboride and hafnium diboride.
Zirconium diboride powder preparation
ZrO2 and HfO2 are reduced to their respective diboron silanes by metal thermal reduction. Use cheap precursor materials and react according to the following reactions:
ZrO 2 + B 2 O 3 + 5Mg→ZrB 2 + 5MgO
The precursor materials for this reaction (ZrO 2 / TiO 2 / HfO 2 and B 4 C) are cheaper than those required for stoichiometric and boron thermal reactions. Prepare zirconium diboride at a temperature higher than 1600°C for at least 1 hour through the following reaction:
2ZrO 2 + B 4 C + 3C→2ZrB 2 + 4CO
This method requires a slight excess of boron because some boron is oxidized during the boron carbide reduction process. It is also observed that ZrC is the product of the reaction, but if the reaction is carried out under an excess of 20-25% of B4C, the ZrC phase disappears and only ZrB2 remains. The lowest synthesis temperature (~1600°C) will produce UHTC with finer dimensions and better sinterability. Before boron carbide reduction, the boron carbide must be ground to promote the oxide reduction and diffusion process.
ZrO2 and HfO2 can be dispersed on the boron carbide polymer precursor before the reaction. in. Heating the reaction mixture to 1500°C results in the formation of boron carbide and carbon in situ, and the subsequent reduction of ZrO2 to ZrB2.
The gas phase is used to reduce the vapors of zirconium tetrachloride and boron trichloride when the substrate temperature is higher than 800°C. Recently, alternative ZrB2 films can also be prepared by physical vapor deposition.
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