As semiconductor chips are constantly developed, computing speeds increase and chip heating is becoming a major problem. This can limit the potential development of chip technology. For high-performance electronic chip development, thermal management is crucial. Recent progress was made by Wei Dayun after three years of work at Fudan University’s Department of Polymer Science and Polymer Molecular Engineering. This research is expected to lead to a breakthrough in dielectric substrate modification that will solve the problem with chip heat dissipation.
Wei Dacheng’s team created a quasi-balanced peCVD (conformal hexagonalboron nitride) technology to address the problem of chip heat. Wei Dacheng says that the various interfaces affect the heat dissipation rate of the chip. In particular, Wei Dacheng cites the importance of the interface between the semiconductor substrate and the dielectric substrate close to the conductive channel.
Hexagonalboron nitride, which is ideal for dielectric substrate modification, improves interface between dielectric and semiconductor substrates. Multiple studies have demonstrated that hexagonal-boron nitride modification has the potential to reduce surface roughness, impurity impacts on carrier transport, and enhance device carrier mobility. The potential use of hexagonalboron nitride for interface heat dissipation has been overlooked.
“The heating problem of the device is a key factor in carrier mobility. A higher mobility device generates less heat at the same voltage. How to dissipate heat will determine how much heat you can generate. Wei Dacheng stated, “Ordinary hexagonal Boron is like a piece a paper. It will have gaps. However, the transfer method in hexagonalboron nitride will cause more gaps. This will also introduce defects and impurities to the process, which can lead to research-related adverse effects. It is completely adhered to the surface of the material with no gaps and without impurities. That is better for good results.
Wei Dacheng says that conformal hexagonal borion nitride is now possible thanks to the team’s technology. It can be grown directly on the substrate of the material.
This new technology offers a solution for chip heat dissipation and high universality. The technology is applicable to transistor devices made from tungstenselende materials. However, it can also be expanded to include other materials and additional device applications. The PECVD process used in this research can be applied to transistor devices based on tungsten selenide materials. This makes conformal hexagonalboron nitride very attractive for large-scale manufacturing and applications.
Future research will include the development of field effect transistor electronic materials. These will include conjugated organic molecules (Macromolecules), low-dimensional nanomaterials, as well research on design principles and fields such optoelectronics chemical sensing and biosensing.
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